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ChinaIXFK360N15T2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFK360N15T2
BESCHREIBUNG
MOSFET N-CH 150V 360A TO264AA
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 360A (Tc) 1670W (Tc) Through Hole TO-264AA (IXFK)
HERSTELLER
IXYS
STANDARD LEADTIME
45 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, TrenchT2™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
360A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
715 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
47500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1670W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264AA (IXFK)
Package / Case
TO-264-3, TO-264AA
Base Product Number
IXFK360
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFK360N15T2
Dokumente und Medien
Datasheets
1(IXF(K,X)360N15T2)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(GigaMOS™ TrenchT2™ Power MOSFETs)
HTML Datasheet
1(IXF(K,X)360N15T2)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $23.9781
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $27.415
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $30.85
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
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