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ChinaIPU60R2K0C6BKMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPU60R2K0C6BKMA1
BESCHREIBUNG
MOSFET N-CH 600V 2.4A TO251-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2.4A (Tc) 22.3W (Tc) Through Hole PG-TO251-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
6.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
22.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
IPU60R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPU60R2K0C6BKMA1-IT
INFINFIPU60R2K0C6BKMA1
SP000931528
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU60R2K0C6BKMA1
Dokumente und Medien
Datasheets
1(IPU60R2K0C6)
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1(Part Number Guide)
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HTML Datasheet
1(IPU60R2K0C6)
Menge Preis
-
Stellvertreter
Teil Nr. : STD4NK60Z-1
Hersteller. : STMicroelectronics
Verfügbare Menge. : 35
Einzelpreis. : $0.89000
Ersatztyp. : Similar
Verfügbare Menge. : 35
Einzelpreis. : $0.89000
Ersatztyp. : Similar