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ChinaIRF6713STRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6713STRPBF
BESCHREIBUNG
MOSFET N-CH 25V 22A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2880 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SQ
Package / Case
DirectFET™ Isometric SQ
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6713STRPBF
Dokumente und Medien
Datasheets
1(IRF6713S (TR) PBF)
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Menge Preis
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