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TEILNUMMER DES HERSTELLERS
2SA1869-Y(Q,M)
BESCHREIBUNG
TRANS PNP 50V 3A TO220NIS
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 50 V 3 A 100MHz 10 W Through Hole TO-220NIS
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA, 2V
Power - Max
10 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SA1869
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2SA1869YQM
2SA1869-Y(QM)
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SA1869-Y(Q,M)
Dokumente und Medien
Datasheets
1(2SA1869)
HTML Datasheet
1(2SA1869)
Menge Preis
-
Stellvertreter
Teil Nr. : 2SA2097(TE16L1,NQ)
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 0
Einzelpreis. : $0.78000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.78000
Ersatztyp. : Similar