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ChinaNTMFD4C86NT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMFD4C86NT1G
BESCHREIBUNG
MOSFET 2N-CH 30V 11.3A 8DFN
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 11.3A, 18.1A 1.1W Surface Mount 8-DFN (5x6)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
11.3A, 18.1A
Rds On (Max) @ Id, Vgs
5.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1153pF @ 15V
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-DFN (5x6)
Base Product Number
NTMFD4
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSNTMFD4C86NT1G
NTMFD4C86NT1GOSCT
NTMFD4C86NT1GOSTR
NTMFD4C86NT1GOSDKR
NTMFD4C86NT1G-ND
2156-NTMFD4C86NT1G-ONTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTMFD4C86NT1G
Dokumente und Medien
Datasheets
1(NTMFD4C86N)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(3Q Mult Dev EOL 9/Nov/2017)
PCN Assembly/Origin
1(NTMF/NTTF 27/Jan/2017)
HTML Datasheet
1(NTMFD4C86N)
Menge Preis
-
Stellvertreter
Teil Nr. : BSC0993NDATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 100
Einzelpreis. : $1.65000
Ersatztyp. : Similar
Verfügbare Menge. : 100
Einzelpreis. : $1.65000
Ersatztyp. : Similar