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ChinaNTHL080N120SC1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTHL080N120SC1
BESCHREIBUNG
SICFET N-CH 1200V 44A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 44A (Tc) 348W (Tc) Through Hole TO-247-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTHL080N120SC1 Models
STANDARDPAKET
450
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 20 V
Vgs (Max)
+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
348W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
NTHL080
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTHL080N120SC1
Dokumente und Medien
Datasheets
1(NTHL080N120SC1)
Video File
1(M3S 1200V SiC MOSFETs | Datasheet Preview)
Environmental Information
()
Featured Product
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 7/Jul/2021)
PCN Design/Specification
1(Dimension/Color Change 24/Feb/2021)
PCN Assembly/Origin
1(Mult Dev Material Chg 12/Sep/2019)
PCN Packaging
1(Packing quantity increase 28/Dec/2020)
EDA Models
1(NTHL080N120SC1 Models)
Menge Preis
-
Stellvertreter
-