English
Spain
Rusia
Italy
ChinaBSM300C12P3E301
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM300C12P3E301
BESCHREIBUNG
SICFET N-CH 1200V 300A MODULE
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 300A (Tc) 1360W (Tc) Module
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
19 Weeks
EDACAD-MODELL
STANDARDPAKET
4
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 80mA
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 10 V
FET Feature
Standard
Power Dissipation (Max)
1360W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Supplier Device Package
Module
Package / Case
Module
Base Product Number
BSM300
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor BSM300C12P3E301
Dokumente und Medien
Datasheets
1(BSM300C12P3E301)
Product Training Modules
1(Industrial Motor Products: Part 1 - Power Devices/Gate Drivers)
Video File
1(ROHM's SiC Power and Gate Driver Solutions)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $893.42
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-