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ChinaIRF7779L2TR1PBF
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TEILNUMMER DES HERSTELLERS
IRF7779L2TR1PBF
BESCHREIBUNG
MOSFET N-CH 150V 375A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 375A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6660 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric L8
Package / Case
DirectFET™ Isometric L8
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001575282
IRF7779L2TR1PBFTR
IRF7779L2TR1PBFDKR
IRF7779L2TR1PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7779L2TR1PBF
Dokumente und Medien
Datasheets
1(IRF7779L2TR(1)PBF)
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PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF7779L2TR(1)PBF)
Product Drawings
1(IR Hexfet Circuit)
Menge Preis
-
Stellvertreter
Teil Nr. : IRF7779L2TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 5,565
Einzelpreis. : $6.26000
Ersatztyp. : Direct
Verfügbare Menge. : 5,565
Einzelpreis. : $6.26000
Ersatztyp. : Direct