English
Spain
Rusia
Italy
ChinaSIA418DJ-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIA418DJ-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 12A PPAK SC70-6
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA418
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIA418DJT1GE3
SIA418DJ-T1-GE3DKR
SIA418DJ-T1-GE3CT
SIA418DJ-T1-GE3TR
2266-SIA418DJ-T1-GE3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA418DJ-T1-GE3
Dokumente und Medien
Datasheets
1(SIA418DJ)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIA418DJ)
Menge Preis
-
Stellvertreter
Teil Nr. : SIA462DJ-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 2
Einzelpreis. : $0.40000
Ersatztyp. : Direct
Verfügbare Menge. : 2
Einzelpreis. : $0.40000
Ersatztyp. : Direct