English
Spain
Rusia
Italy
ChinaIRFS52N15DPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFS52N15DPBF
BESCHREIBUNG
MOSFET N-CH 150V 51A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 51A (Tc) 3.8W (Ta), 230W (Tc) Surface Mount D2PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
32mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFS52N15DPBF
Dokumente und Medien
Datasheets
1(IRFB52N15DPbF, IRFS(L)52N15DPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Material Chg 24/Nov/2015)
HTML Datasheet
1(IRFB52N15DPbF, IRFS(L)52N15DPbF)
Simulation Models
1(IRFS52N15DPBF Saber Model)
Menge Preis
-
Stellvertreter
Teil Nr. : STB75NF20
Hersteller. : STMicroelectronics
Verfügbare Menge. : 0
Einzelpreis. : $5.93000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $5.93000
Ersatztyp. : Similar