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ChinaSI7964DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI7964DP-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 60V 6.1A PPAK SO8
DETAILIERTE BESCHREIBUNG
Mosfet Array 60V 6.1A 1.4W Surface Mount PowerPAK® SO-8 Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
6.1A
Rds On (Max) @ Id, Vgs
23mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.4W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
Base Product Number
SI7964
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI7964DP-T1-GE3
Dokumente und Medien
Datasheets
1(Dual N-Channel 60-V (D-S) MOSFET)
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI7964DP)
Menge Preis
-
Stellvertreter
-