Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPD65R250C6XTMA1
BESCHREIBUNG
MOSFET N-CH 650V 16.1A TO252-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 16.1A (Tc) 208.3W (Tc) Surface Mount PG-TO252-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
250mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
208.3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
-
Base Product Number
IPD65R

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IPD65R250C6XTMA1CT
ROCINFIPD65R250C6XTMA1
2156-IPD65R250C6XTMA1
IPD65R250C6XTMA1DKR
IPD65R250C6XTMA1TR
SP000898654

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD65R250C6XTMA1

Dokumente und Medien

Datasheets
1(IPD65R250C6)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPD65R250C6)
Simulation Models
1(CoolMOS™ Power MOSFET 650V C6 Spice Model)

Menge Preis

-

Stellvertreter

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