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TEILNUMMER DES HERSTELLERS
IPB77N06S212ATMA2
BESCHREIBUNG
MOSFET N-CH 55V 77A TO263-3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 77A (Tc) 158W (Tc) Surface Mount PG-TO263-3-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
77A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.7mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
158W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB77N06
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPB77N06S212ATMA2-ND
448-IPB77N06S212ATMA2TR
SP001061294
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB77N06S212ATMA2
Dokumente und Medien
Datasheets
1(IPx77N06S2-12)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx77N06S2-12)
Menge Preis
-
Stellvertreter
Teil Nr. : IPB80N06S2L11ATMA2
Hersteller. : Infineon Technologies
Verfügbare Menge. : 923
Einzelpreis. : $2.20000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 923
Einzelpreis. : $2.20000
Ersatztyp. : MFR Recommended
Teil Nr. : HUF76439S3ST
Hersteller. : onsemi
Verfügbare Menge. : 361
Einzelpreis. : $2.49000
Ersatztyp. : Similar
Verfügbare Menge. : 361
Einzelpreis. : $2.49000
Ersatztyp. : Similar