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ChinaSIZ920DT-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIZ920DT-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 30V 40A 8POWERPAIR
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 40A 39W, 100W Surface Mount 8-PowerPair® (6x5)
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
40A
Rds On (Max) @ Id, Vgs
7.1mOhm @ 18.9A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1260pF @ 15V
Power - Max
39W, 100W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-PowerPair® (6x5)
Base Product Number
SIZ920
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIZ920DT-T1-GE3TR
SIZ920DT-T1-GE3DKR
SIZ920DTT1GE3
SIZ920DT-T1-GE3CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIZ920DT-T1-GE3
Dokumente und Medien
Datasheets
1(SIZ920DT)
Featured Product
1(PowerPAIR®)
PCN Obsolescence/ EOL
1(Mult Devices 15/Sep/2017)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SIZ920DT)
Menge Preis
-
Stellvertreter
Teil Nr. : SIZ998DT-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 13,250
Einzelpreis. : $1.48000
Ersatztyp. : Direct
Verfügbare Menge. : 13,250
Einzelpreis. : $1.48000
Ersatztyp. : Direct