Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF634
BESCHREIBUNG
MOSFET N-CH 250V 8.1A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 8.1A (Tc) 74W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
IRF634 Models
STANDARDPAKET
1,000

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF634

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRF634IR
IRF634-ND
*IRF634

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRF634

Dokumente und Medien

Datasheets
()
EDA Models
1(IRF634 Models)

Menge Preis

-

Stellvertreter

Teil Nr. : IRF634PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 6,650
Einzelpreis. : $1.68000
Ersatztyp. : Direct
Teil Nr. : RCX100N25
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 430
Einzelpreis. : $2.16000
Ersatztyp. : Direct