Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF7811WTRPBF
BESCHREIBUNG
MOSFET N-CH 30V 14A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 14A (Ta) 3.1W (Ta) Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
12mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2335 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRF7811WTRPBF-ND
SP001563666
IRF7811WPBFDKR
*IRF7811WTRPBF
IRF7811WTRPBFTR-ND
IRF7811WPBFTR
IRF7811WPBFCT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7811WTRPBF

Dokumente und Medien

Datasheets
1(IRF7811WPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF7811WPbF)

Menge Preis

-

Stellvertreter

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