Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF640NLPBF
BESCHREIBUNG
MOSFET N-CH 200V 18A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-262
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRF640

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

*IRF640NLPBF
SP001563296

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF640NLPBF

Dokumente und Medien

Datasheets
1(IRF640N(S,L)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(IRF640N(S,L)PbF)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $0.9929
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $1.1734
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $1.474
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.78
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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