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ChinaIPI90R500C3XKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPI90R500C3XKSA1
BESCHREIBUNG
MOSFET N-CH 900V 11A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI90R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000413728
IPI90R500C3
IPI90R500C3-ND
SP000683084
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI90R500C3XKSA1
Dokumente und Medien
Datasheets
1(IPI90R500C3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPI90R500C3)
Simulation Models
1(CoolMOS™ Power MOSFET 900V C3 Spice Model)
Menge Preis
-
Stellvertreter
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