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TEILNUMMER DES HERSTELLERS
SDT10S30
BESCHREIBUNG
DIODE SIL CARB 300V 10A TO220-2
DETAILIERTE BESCHREIBUNG
Diode 300 V 10A Through Hole PG-TO220-2-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolSiC™+
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
300 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 µA @ 300 V
Capacitance @ Vr, F
600pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
PG-TO220-2-2
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
SDT10S
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
SDT10S30IN
2156-SDT10S30-IT
SDT10S30XK
SDT10S30XTIN
SDT10S30IN-NDR
SDT10S30X
IFEINFSDT10S30
SDT10S30XTIN-ND
SP000013824
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Infineon Technologies SDT10S30
Dokumente und Medien
Datasheets
1(SDP10S30, SDT10S30)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SDP10S30, SDT10S30)
Product Drawings
1(Circuit)
Menge Preis
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Stellvertreter
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