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ChinaMCB60P1200TLB-TUB
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MCB60P1200TLB-TUB
BESCHREIBUNG
SIC 2N-CH 1200V 9SMPD
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) Surface Mount 9-SMPD-B
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
20
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Tube
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
-
Operating Temperature
-
Mounting Type
Surface Mount
Package / Case
9-PowerSMD
Supplier Device Package
9-SMPD-B
Base Product Number
MCB60P1200
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/IXYS MCB60P1200TLB-TUB
Dokumente und Medien
Environmental Information
1(Ixys IC REACH)
PCN Packaging
1(Change of label 01/Jul/2023)
Menge Preis
-
Stellvertreter
-