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ChinaIRLI3705NPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLI3705NPBF
BESCHREIBUNG
MOSFET N-CH 55V 52A TO220AB FP
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 52A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
IRLI3705NPBF Models
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
98 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
58W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB Full-Pak
Package / Case
TO-220-3 Full Pack
Base Product Number
IRLI3705
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRLI3705NPBF
SP001576840
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLI3705NPBF
Dokumente und Medien
Datasheets
1(IRLI3705NPbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRLI3705NPBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLI3705NPbF)
EDA Models
1(IRLI3705NPBF Models)
Simulation Models
1(IRLI3705NPBF Spice Model)
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