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ChinaFCP380N60E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCP380N60E
BESCHREIBUNG
MOSFET N-CH 600V 10.2A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 10.2A (Tc) 106W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
FCP380N60E Models
STANDARDPAKET
213
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1770 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
106W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFCP380N60E
2156-FCP380N60E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCP380N60E
Dokumente und Medien
Datasheets
1(FCP380N60E Datasheet)
EDA Models
1(FCP380N60E Models)
Menge Preis
QUANTITÄT: 213
Einzelpreis: $1.41
Verpackung: Bulk
MinMultiplikator: 213
Verpackung: Bulk
MinMultiplikator: 213
Stellvertreter
-