Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFR180N06
BESCHREIBUNG
MOSFET N-CH 60V 180A ISOPLUS247
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 180A (Tc) 560W (Tc) Through Hole ISOPLUS247™
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
420 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
560W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ISOPLUS247™
Package / Case
TO-247-3
Base Product Number
IXFR180

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFR180N06

Dokumente und Medien

Datasheets
1(IXFR180N06)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult Devices OBS 24/Feb/2014)
HTML Datasheet
1(IXFR180N06)

Menge Preis

QUANTITÄT: 30
Einzelpreis: $15.848
Verpackung: Tube
MinMultiplikator: 30

Stellvertreter

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