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ChinaIXFN210N20P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFN210N20P
BESCHREIBUNG
MOSFET N-CH 200V 188A SOT-227B
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 188A (Tc) 1070W (Tc) Chassis Mount SOT-227B
HERSTELLER
IXYS
STANDARD LEADTIME
57 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Polar
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
188A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
255 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
18600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1070W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN210
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN210N20P
Dokumente und Medien
Datasheets
1(IXFN210N20P)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXFN210N20P)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $36.6324
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $41.735
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $46.84
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-