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ChinaIRFBL3703
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFBL3703
BESCHREIBUNG
MOSFET N-CH 30V 260A SUPER D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 260A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount SUPER D2-PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 76A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
209 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
Mounting Type
Surface Mount
Supplier Device Package
SUPER D2-PAK
Package / Case
Super D2-Pak
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFBL3703
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