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ChinaCY7C1312KV18-250BZI
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
CY7C1312KV18-250BZI
BESCHREIBUNG
IC SRAM 18MBIT PAR 165FBGA
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 165-FBGA (13x15)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
11 Weeks
EDACAD-MODELL
CY7C1312KV18-250BZI Models
STANDARDPAKET
680
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, QDR II
Memory Size
18Mbit
Memory Organization
1M x 18
Memory Interface
Parallel
Clock Frequency
250 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.7V ~ 1.9V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
165-LBGA
Supplier Device Package
165-FBGA (13x15)
Base Product Number
CY7C1312
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
2266-CY7C1312KV18-250BZI
2832-CY7C1312KV18-250BZI
CYPCYPCY7C1312KV18-250BZI
-CY7C1312KV18-250BZI
2015-CY7C1312KV18-250BZI
2156-CY7C1312KV18-250BZI
CY7C1312KV18250BZI
SP005644783
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY7C1312KV18-250BZI
Dokumente und Medien
Datasheets
1(CY7C(131x,1910)KV18)
Other Related Documents
1(Cypress “No Warranty” Parts)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Cypress Memory Products)
PCN Design/Specification
1(Mult Device Serial No Mark 26/Sep/2017)
PCN Assembly/Origin
1(Qualification of Die Attach Film 13/Dec/2013)
PCN Packaging
()
PCN Other
1(Multiple Updates 27/Mar/2015)
HTML Datasheet
1(CY7C(131x,1910)KV18)
EDA Models
1(CY7C1312KV18-250BZI Models)
Menge Preis
QUANTITÄT: 680
Einzelpreis: $25.97671
Verpackung: Tray
MinMultiplikator: 680
Verpackung: Tray
MinMultiplikator: 680
Stellvertreter
-