English
Spain
Rusia
Italy
ChinaBUK9907-55ATE,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK9907-55ATE,127
BESCHREIBUNG
MOSFET N-CH 55V 75A TO220-5
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 75A (Tc) 272W (Tc) Through Hole TO-220-5
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
108 nC @ 5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
5836 pF @ 25 V
FET Feature
Temperature Sensing Diode
Power Dissipation (Max)
272W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-5
Package / Case
TO-220-5
Base Product Number
BUK99
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BUK9907-55ATE127
BUK9907-55ATE-ND
568-9761-5
934056981127
BUK9907-55ATE,127-ND
BUK9907-55ATE
NEXNXPBUK9907-55ATE,127
BUK990755ATE127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK9907-55ATE,127
Dokumente und Medien
Datasheets
1(BUK9907-55ATE)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 29/Dec/2014)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BUK9907-55ATE)
Menge Preis
-
Stellvertreter
-