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ChinaPBSS4260QAZ
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TEILNUMMER DES HERSTELLERS
PBSS4260QAZ
BESCHREIBUNG
NOW NEXPERIA PBSS4260QA - SMALL
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 2 A 180MHz 325 mW Surface Mount DFN1010D-3
HERSTELLER
NXP Semiconductors
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,904
Lagerbestände
Technische Daten
Mfr
NXP Semiconductors
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
190mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2A, 2V
Power - Max
325 mW
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Grade
Automotive
Qualification
AEC-Q100
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-PBSS4260QAZ
NEXNEXPBSS4260QAZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP Semiconductors PBSS4260QAZ
Dokumente und Medien
Datasheets
1(PBSS4260QAZ Datasheet)
Menge Preis
QUANTITÄT: 3904
Einzelpreis: $0.08
Verpackung: Bulk
MinMultiplikator: 3904
Verpackung: Bulk
MinMultiplikator: 3904
Stellvertreter
-