Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
HUF76432S3ST
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 59A (Tc) 130W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
300

Technische Daten

Mfr
Fairchild Semiconductor
Series
UltraFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
17mOhm @ 59A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1765 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FAIFSCHUF76432S3ST
2156-HUF76432S3ST

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF76432S3ST

Dokumente und Medien

Datasheets
1(HUF76432P3)

Menge Preis

QUANTITÄT: 300
Einzelpreis: $1
Verpackung: Bulk
MinMultiplikator: 300

Stellvertreter

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