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ChinaHGTG32N60E2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HGTG32N60E2
BESCHREIBUNG
50A, 600V N-CHANNEL IGBT
DETAILIERTE BESCHREIBUNG
IGBT 600 V 50 A 208 W Through Hole TO-247
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
38
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
50 A
Current - Collector Pulsed (Icm)
200 A
Vce(on) (Max) @ Vge, Ic
2.9V @ 15V, 32A
Power - Max
208 W
Switching Energy
-
Input Type
Standard
Gate Charge
265 nC
Td (on/off) @ 25°C
-
Test Condition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARHGTG32N60E2
2156-HGTG32N60E2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Harris Corporation HGTG32N60E2
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 38
Einzelpreis: $7.95
Verpackung: Bulk
MinMultiplikator: 38
Verpackung: Bulk
MinMultiplikator: 38
Stellvertreter
-