Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
HUF75329G3
BESCHREIBUNG
MOSFET N-CH 55V 49A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 49A (Tc) 128W (Tc) Through Hole TO-247-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
onsemi
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 49A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
128W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
HUF75

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi HUF75329G3

Dokumente und Medien

Datasheets
1(HUF75329G3, P3, S3S)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(HUF75329G3, P3, S3S)

Menge Preis

-

Stellvertreter

Teil Nr. : IXTH80N075L2
Hersteller. : IXYS
Verfügbare Menge. : 228
Einzelpreis. : $8.88000
Ersatztyp. : Similar