Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
HUF75639P3-F102
BESCHREIBUNG
MOSFET N-CH 100V 56A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
HUF75639P3-F102 Models
STANDARDPAKET
800

Technische Daten

Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
25mOhm @ 56A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
HUF75639

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2832-HUF75639P3-F102
2832-HUF75639P3-F102-488
HUF75639P3_F102-ND
HUF75639P3_F102

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi HUF75639P3-F102

Dokumente und Medien

Datasheets
1(HUF75639G3, P3, S3, S3S)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 03/Jul/2023)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev 14/Dec/2022)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(HUF75639G3, P3, S3, S3S)
EDA Models
1(HUF75639P3-F102 Models)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $1.30154
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $1.5382
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $1.933
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $2.33
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

-