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ChinaNAND512R3A2SZA6F
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TEILNUMMER DES HERSTELLERS
NAND512R3A2SZA6F
BESCHREIBUNG
IC FLASH 512MBIT PAR 63VFBGA
DETAILIERTE BESCHREIBUNG
FLASH - NAND Memory IC 512Mbit Parallel 50 ns 63-VFBGA (9x11)
HERSTELLER
Micron Technology Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Micron Technology Inc.
Series
-
Package
Bulk
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NAND
Memory Size
512Mbit
Memory Organization
64M x 8
Memory Interface
Parallel
Write Cycle Time - Word, Page
50ns
Access Time
50 ns
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
63-TFBGA
Supplier Device Package
63-VFBGA (9x11)
Base Product Number
NAND512
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Micron Technology Inc. NAND512R3A2SZA6F
Dokumente und Medien
PCN Packaging
1(Standard Pkg Label Chg 20/Feb/2019)
HTML Datasheet
1(NAND512(R,W)(3,4)A2S)
Menge Preis
-
Stellvertreter
-