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ChinaBD681STU-ON
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TEILNUMMER DES HERSTELLERS
BD681STU-ON
BESCHREIBUNG
TRANS NPN DARL 100V 4A TO126-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 100 V 4 A 40 W Through Hole TO-126-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,065
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max)
500µA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-BD681STU-ON
ONSONSBD681STU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BD681STU-ON
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1065
Einzelpreis: $0.28
Verpackung: Bulk
MinMultiplikator: 1065
Verpackung: Bulk
MinMultiplikator: 1065
Stellvertreter
-