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ChinaSTI20N60M2-EP
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STI20N60M2-EP
BESCHREIBUNG
MOSFET N-CHANNEL 600V 13A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 13A (Tc) 110W (Tc) Through Hole TO-220
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ M2-EP
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
278mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21.7 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
787 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STI20
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STI20N60M2-EP
Dokumente und Medien
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Menge Preis
-
Stellvertreter
Teil Nr. : TK14E65W,S1X
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 50
Einzelpreis. : $2.91000
Ersatztyp. : Similar
Verfügbare Menge. : 50
Einzelpreis. : $2.91000
Ersatztyp. : Similar