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ChinaFCU3400N80Z
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCU3400N80Z
BESCHREIBUNG
MOSFET N-CH 800V 2A I-PAK
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 2A (Tc) 32W (Tc) Through Hole IPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
492
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FCU3400N80Z
ONSFSCFCU3400N80Z
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCU3400N80Z
Dokumente und Medien
Datasheets
1(FCU3400N80Z Datasheet)
Menge Preis
QUANTITÄT: 492
Einzelpreis: $0.61
Verpackung: Bulk
MinMultiplikator: 492
Verpackung: Bulk
MinMultiplikator: 492
Stellvertreter
-