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ChinaIPI120N04S302AKSA1
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TEILNUMMER DES HERSTELLERS
IPI120N04S302AKSA1
BESCHREIBUNG
MOSFET N-CH 40V 120A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 120A (Tc) 300W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPI120N04S3-02
INFINFIPI120N04S302AKSA1
SP000261225
IPI120N04S3-02-ND
IPI120N04S302
2156-IPI120N04S302AKSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI120N04S302AKSA1
Dokumente und Medien
Datasheets
1(IPx120N04S3-02)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx120N04S3-02)
Menge Preis
QUANTITÄT: 500
Einzelpreis: $3.57896
Verpackung: Tube
MinMultiplikator: 500
Verpackung: Tube
MinMultiplikator: 500
Stellvertreter
Teil Nr. : STI270N4F3
Hersteller. : STMicroelectronics
Verfügbare Menge. : 888
Einzelpreis. : $4.49000
Ersatztyp. : Similar
Verfügbare Menge. : 888
Einzelpreis. : $4.49000
Ersatztyp. : Similar