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ChinaBSM120D12P2C005
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM120D12P2C005
BESCHREIBUNG
MOSFET 2N-CH 1200V 120A MODULE
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 120A (Tc) 780W Module
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
17 Weeks
EDACAD-MODELL
BSM120D12P2C005 Models
STANDARDPAKET
12
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
14000pF @ 10V
Power - Max
780W
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Rohm Semiconductor BSM120D12P2C005
Dokumente und Medien
Datasheets
()
Other Related Documents
1(SiCPMCtype Inner Structure)
Product Training Modules
()
Video File
()
Environmental Information
()
Featured Product
()
HTML Datasheet
()
EDA Models
1(BSM120D12P2C005 Models)
Simulation Models
1(BSM120D12P2C005 Spice Model)
Reliability Documents
1(SiC PM Reliability Test)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $380.362
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $395.22
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-