Mfr
Microsemi Corporation
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
70mOhm @ 32.5A, 20V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 20 V
Power Dissipation (Max)
220W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D3Pak
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB