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TEILNUMMER DES HERSTELLERS
IRFU9N20D
BESCHREIBUNG
MOSFET N-CH 200V 9.4A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 9.4A (Tc) 86W (Tc) Through Hole IPAK (TO-251AA)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU9N20D
Dokumente und Medien
Datasheets
1(IRFR9N20D, IRFU9N20D)
Other Related Documents
1(IR Part Numbering System)
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HTML Datasheet
1(IRFR9N20D, IRFU9N20D)
Menge Preis
-
Stellvertreter
Teil Nr. : FQU10N20CTU
Hersteller. : onsemi
Verfügbare Menge. : 1,315
Einzelpreis. : $1.66000
Ersatztyp. : Similar
Verfügbare Menge. : 1,315
Einzelpreis. : $1.66000
Ersatztyp. : Similar