English
Spain
Rusia
Italy
ChinaSQJ912AEP-T1_GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SQJ912AEP-T1_GE3
BESCHREIBUNG
MOSFET 2N-CH 40V 30A PPAK SO8
DETAILIERTE BESCHREIBUNG
Mosfet Array 40V 30A 48W Surface Mount PowerPAK® SO-8 Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SQJ912AEP-T1_GE3 Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
30A
Rds On (Max) @ Id, Vgs
9.3mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1835pF @ 20V
Power - Max
48W
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
Base Product Number
SQJ912
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SQJ912AEP-T1_GE3DKR
SQJ912AEP-T1-GE3-ND
SQJ912AEP-T1-GE3
SQJ912AEP-T1_GE3-ND
SQJ912AEP-T1_GE3CT
SQJ912AEP-T1_GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SQJ912AEP-T1_GE3
Dokumente und Medien
Datasheets
1(SQJ912AEP)
Featured Product
1(SQJ264EP 60 V MOSFET)
PCN Obsolescence/ EOL
1(Mult Devs 18/Jun/2021)
PCN Part Number
1(New Ordering Code 19/Mar/2015)
HTML Datasheet
1(SQJ912AEP)
EDA Models
1(SQJ912AEP-T1_GE3 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : SQJ912DEP-T1_GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 2,875
Einzelpreis. : $1.01000
Ersatztyp. : Direct
Verfügbare Menge. : 2,875
Einzelpreis. : $1.01000
Ersatztyp. : Direct