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ChinaCY14V104NA-BA25XI
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
CY14V104NA-BA25XI
BESCHREIBUNG
IC NVSRAM 4MBIT PARALLEL 48FBGA
DETAILIERTE BESCHREIBUNG
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 25 ns 48-FBGA (6x10)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
299
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
NVSRAM
Technology
NVSRAM (Non-Volatile SRAM)
Memory Size
4Mbit
Memory Organization
256K x 16
Memory Interface
Parallel
Write Cycle Time - Word, Page
25ns
Access Time
25 ns
Voltage - Supply
2.7V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
48-TFBGA
Supplier Device Package
48-FBGA (6x10)
Base Product Number
CY14V104
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
SP005644727
2832-CY14V104NA-BA25XI
2015-CY14V104NA-BA25XI
CY14V104NABA25XI
-CY14V104NA-BA25XI
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies CY14V104NA-BA25XI
Dokumente und Medien
Datasheets
1(CY14V104LA,NA)
Other Related Documents
1(Cypress “No Warranty” Parts)
Product Training Modules
1(NVRAM (Nonvolatile RAM) Overview)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Cypress Memory Products)
PCN Design/Specification
()
PCN Assembly/Origin
1(48BGA-121BGA 24/Jun/2016)
PCN Packaging
()
PCN Other
1(Multiple Updates 27/Mar/2015)
HTML Datasheet
1(CY14V104LA,NA)
Menge Preis
-
Stellvertreter
-