English
Spain
Rusia
Italy
ChinaMS1006
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MS1006
BESCHREIBUNG
RF TRANS NPN 55V 30MHZ M135
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 55V 3.25A 30MHz 127W Stud Mount M135
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
55V
Frequency - Transition
30MHz
Noise Figure (dB Typ @ f)
-
Gain
14dB
Power - Max
127W
DC Current Gain (hFE) (Min) @ Ic, Vce
19 @ 1.4A, 6V
Current - Collector (Ic) (Max)
3.25A
Operating Temperature
200°C
Mounting Type
Stud Mount
Package / Case
M135
Supplier Device Package
M135
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
150-MS1006
MS1006-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Microsemi Corporation MS1006
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 10/Aug/2017)
Menge Preis
-
Stellvertreter
-