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ChinaCP802-CWDM3011P-CM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
CP802-CWDM3011P-CM
BESCHREIBUNG
MOSFET P-CH 30V 11A DIE
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 11A (Ta) Surface Mount Die
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
100
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Tray
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 8 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die
Base Product Number
CP802
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Central Semiconductor Corp CP802-CWDM3011P-CM
Dokumente und Medien
Datasheets
1(CP802-CWDM3011P)
Environmental Information
1(RoHS Cert)
Menge Preis
-
Stellvertreter
-