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ChinaBUK753R8-80E,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUK753R8-80E,127
BESCHREIBUNG
TRANSISTOR >30MHZ
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 120A (Tc) 349W (Tc) Through Hole TO-220AB
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
256
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
169 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12030 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
349W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
NEXNXPBUK753R8-80E,127
2156-BUK753R8-80E127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK753R8-80E,127
Dokumente und Medien
Datasheets
1(BUK753R8-80E)
HTML Datasheet
1(BUK753R8-80E)
Menge Preis
QUANTITÄT: 256
Einzelpreis: $1.18
Verpackung: Tube
MinMultiplikator: 256
Verpackung: Tube
MinMultiplikator: 256
Stellvertreter
-