English
Spain
Rusia
Italy
ChinaFDB3632_SB82115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDB3632_SB82115
BESCHREIBUNG
MOSFET N-CH 100V 12A/80A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 12A (Ta), 80A (Tc) 310W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
310W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FDB363
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDB3632_SB82115
Dokumente und Medien
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
1(onsemi RoHS)
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Mult Devices 17/Apr/2017)
Menge Preis
-
Stellvertreter
Teil Nr. : NVB6411ANT4G
Hersteller. : onsemi
Verfügbare Menge. : 800
Einzelpreis. : $1.72000
Ersatztyp. : Similar
Verfügbare Menge. : 800
Einzelpreis. : $1.72000
Ersatztyp. : Similar