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ChinaDS1230YL-100
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DS1230YL-100
BESCHREIBUNG
DS1230 3.3 VOLT, 256 K NV SRAM
DETAILIERTE BESCHREIBUNG
NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 100 ns 28-EDIP
HERSTELLER
Analog Devices Inc./Maxim Integrated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
17
Lagerbestände
Technische Daten
Mfr
Analog Devices Inc./Maxim Integrated
Series
-
Package
Bulk
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
NVSRAM
Technology
NVSRAM (Non-Volatile SRAM)
Memory Size
256Kbit
Memory Organization
32K x 8
Memory Interface
Parallel
Write Cycle Time - Word, Page
100ns
Access Time
100 ns
Voltage - Supply
4.5V ~ 5.5V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Through Hole
Package / Case
28-DIP Module (0.600", 15.24mm)
Supplier Device Package
28-EDIP
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8542.32.0041
Andere Namen
2156-DS1230YL-100
MAXMAXDS1230YL-100
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Analog Devices Inc./Maxim Integrated DS1230YL-100
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 17
Einzelpreis: $18.11
Verpackung: Bulk
MinMultiplikator: 17
Verpackung: Bulk
MinMultiplikator: 17
Stellvertreter
-