English
Spain
Rusia
Italy
ChinaFDR836P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDR836P
BESCHREIBUNG
P-CHANNEL MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 6.1A (Ta) 900mW (Ta) Surface Mount SuperSOT™-8
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
333
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
30mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-8
Package / Case
8-LSOP (0.130", 3.30mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-FDR836P
FAIFSCFDR836P
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDR836P
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 333
Einzelpreis: $0.9
Verpackung: Bulk
MinMultiplikator: 333
Verpackung: Bulk
MinMultiplikator: 333
Stellvertreter
-