Mfr
Toshiba Semiconductor and Storage
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
12A (DC)
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
60 µA @ 650 V
Operating Temperature - Junction
175°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Base Product Number
TRS24N65