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ChinaSQJ962EP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SQJ962EP-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 60V 8A PPAK SO8
DETAILIERTE BESCHREIBUNG
Mosfet Array 60V 8A 25W Surface Mount PowerPAK® SO-8 Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
SQJ962EP-T1-GE3 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
60mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
475pF @ 25V
Power - Max
25W
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Supplier Device Package
PowerPAK® SO-8 Dual
Base Product Number
SQJ962
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SQJ962EP-T1-GE3
Dokumente und Medien
Datasheets
1(SQJ962EP-T1-GE3)
PCN Obsolescence/ EOL
1(SIL-053-2014-Rev-1 22/Sep/2014)
HTML Datasheet
1(SQJ962EP-T1-GE3)
EDA Models
1(SQJ962EP-T1-GE3 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : SQJ992EP-T1_GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 2,942
Einzelpreis. : $1.34000
Ersatztyp. : Direct
Verfügbare Menge. : 2,942
Einzelpreis. : $1.34000
Ersatztyp. : Direct